On 5/31/2009 10:52:21 PM, g1lai wrote:
>My system is basically a Si
>solar cell (200 micron thick)
>on back contact metal (25
>micron Ag). In the real case,
>the below bandgap light will
>penetrate through Si and
>reflected from the Ag layer. I
>will then calculate the
>electromagnetic intensity at
>individual layer.
>
>My question is about the thick
>Ag layer, but actually I am
>really interested in the thick
>Si layer. Unfortunately, the
>transfer matrix does not seem
>to work for the thick layer.
Well, I'm confused. I presume that "below bandgap" refers to wavelengths below 1200 nm. However, as shown in
http://pvcdrom.pveducation.org/SEMICON/ABSDEPTH.HTM wavelengths above 800 nm are essentially nonparticipatory in solar cell operation, because the absorption needs to close to the junction to do anything useful in conversion. Photons absorbed away from the junction will tend to recombine before they can reach the junction, assuming that the photocarriers are even headed in the right direction.
TTFN,
Eden